Silicon Carbide Technology of MESFET-Based Power Integrated Circuits

Silicon Carbide Power MESFET

Silicon Carbide Bipolar Integrated Circuits for High Temperature Applications

Silicon carbide (SiC) is a semiconductor that provides significant advantages for high-power and high-temperature applications thanks to its wide bandgap, which is several times larger than silicon. The resulting high breakdown field, high thermal conductivity and high intrinsic temperature (well above 600 °C) allow high temperature operation of SiC devices and relaxed cooling requirements. In ...

Ohmic Contacts for High Temperature Integrated Circuits in Silicon Carbide

in English ..........................................................................................................................................I Svensk sammanfattning ............................................................................................................................... II Acknowledgement ................................................................................

Post-silicon power mapping techniques for integrated circuits

We propose a new methodology for post-silicon power validation using the captured thermal infrared emissions from the back-side of operational integrated circuits. We first identify the challenges associated with thermal to power inversion, and then we address these challenges by devising a quadratic optimization formulation that incorporates Tikhonov filtering techniques to find the most accur...

Silicon Carbide for Novel Quantum Technology Devices

Silicon carbide (SiC) has recently been investigated as an alternative material to host deep optically active defects suitable for optical and spin quantum bits. This material presents a unique opportunity to realise more advanced quantum-based devices and sensors than currently possible. We will summarise key results revealing the role that defects have played in enabling optical and spin quan...